The Ultratech S200 G2 Savannah ALD system is a single chamber atomic layer deposition system. 

  • It has six precursor channels number 0-5 and has 
    • Deionized H2O, 
    • HfO2 - Tetrakis Dimethyl Hafnium
    • Al2O3 - Trimethyl Aluminum
    • TiO2 - Tetrakis Dimethyl Titanium
    • ZrO2 - Tetrakis Dimethyl Zirconium
    • ZiO - Diethyl Zinc  (chamber needs an overcoat of HfO2 after zinc depostions) 
  • Precursors can change with the needs of users but must be scheduled with the SMFL to make any changes.


Tool & Process Information

Manuals & User

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