Ultratech ALD

Facts

The Ultratech S200 G2 Savannah ALD system is a single chamber atomic layer deposition system. 

• It has six precursor channels number 0-5 and has 
  • Deionized H2O, 
  • HfO2 - Tetrakis Dimethyl Hafnium
  • Al2O3 - Trimethyl Aluminum
  • TiO2 - Tetrakis Dimethyl Titanium
  • ZrO2 - Tetrakis Dimethyl Zirconium
  • ZiO - Diethyl Zinc  (chamber needs an overcoat of HfO2 after zinc depostions) 
• Precursors can change with the needs of users but must be scheduled with the SMFL to make any changes.

Personnel

• Equipment Engineer - Bruce Tolleson
• Process Engineer - Sean O'Brien
• Super User - Patricia Meller
• Any of these personnel can certify new users

Tool & Process Information

• ALD Deposition Information

Manuals & User

• ALD Manual - Rev D - 3/12/20
• ALD Certification Checklist