Etch Rates in A/min10:1 BOE @20.7C10:1 BOE w/surf @20.7C5.2:1 BOE @20.6C20:1 Slope Etch @20.6C50:1 HF @20.3C16:3:3 Pad Etch @20.4C20% KOH @75CPhosphoric Acid @163C16:1:1:2 Aluminum Etch @39.4CFreckle Etch @20.7C
Thermal Oxide5325821298319118623231311
Low Temperature Oxide @425C1394157447421106524233514510668
TEOS @390C117516323898648465176512511669
Factory Nitride @810C1915251222230.5510<1
Stochiometric Nitride @800C9214712140.54612
Low Pressure Nitride @800C119161012130.24611
Plasma Nitride- Conventional @400C2725378<117512825760<1168
(100) Siliconnananananana5942nanana
Aluminum/1% Si-CVC6015295244731466594nana2640247
11